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Same model may have multiple batches, images only for reference.
2SK3482-AZ Real Image
Same model may have multiple batches, images only for reference.

2SK3482-AZ

Part No 2SK3482-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V MP-3/TO-251
Datasheet
2SK3482-AZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 18A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-251 (MP-3)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1004733-2SK3482-AZ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SK3482-AZ CAD Model

Description

The Renesas Electronics America MOSFET 1004733-2SK3482-AZ is a high-performance N-Channel MOSFET that comes in a through-hole package of TO-251 (MP-3).

  • Polarity: N-Channel
  • Package: TO-251 (MP-3)
  • Mounting Type: Through-Hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (at 25°C): 36A (Ta)
  • Gate-Source Voltage (Max): ±20V
  • Rds On (Max) at Id,Vgs: 33 mOhm @ 18A, 10V
  • Input Capacitance (Max): 3600pF @ 10V
  • Gate Charge (Max): 72nC @ 10V
  • Applications: Power Supplies, DC-DC Converters, Motor Control Circuits

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