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Same model may have multiple batches, images only for reference.
2SK3793-AZ
Same model may have multiple batches, images only for reference.

2SK3793-AZ

Part No 2SK3793-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V MP-45F/TO-220
Datasheet
2SK3793-AZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 21nC @ 10V
Max Input Capacitance 900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Isolated Tab
Dimension TO-220-3 Isolated Tab
Win Source Part Number 1004747-2SK3793-AZ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SK3793-AZ CAD Model

Description

The Renesas Electronics America 2SK3793-AZ is an N-Channel MOSFET transistor with a maximum power dissipation of 2W @ Ta and 20W @ Tc.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 125 mOhm @ 6A, 10V
  • Package: TO-220-3 isolated tab
  • Mounting: through hole
  • Application: discrete semiconductor products
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Maximum Input Capacitance: 900pF @ 10V
  • Maximum Gate Charge: 21nC @ 10V
  • Operating Temperature Range: 150°C (TJ)
  • Product Status: obsolete (EOL)
  • Supply and Demand Status: sufficient

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164+ $2.1148 $346.8272
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