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Same model may have multiple batches, images only for reference.
2SK3984-ZK-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

2SK3984-ZK-E1-AY

Part No 2SK3984-ZK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A TO252  /  N-Channel 100 V 18A (Tc) 1W (Ta), 20W (Tc) Surface Mount TO-252 (MP-3ZK)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Rds On (Max) @ Id, Vgs 85mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 10 V
Power Dissipation (Max) 1W (Ta), 20W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252 (MP-3ZK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-2SK3984-ZK-E1-AY,RENRNS2SK3984-ZK-E1-AY,2156-2SK3984-ZK-E1-AY-RETR-ND
Standard Package 2,500
Win Source Part Number 985658-2SK3984-ZK-E1-AY
Ultra Librarian 3D Model Ultra Librarian 2SK3984-ZK-E1-AY CAD Model

Description

The Renesas Electronics America MOSFET (Metal Oxide) transistor is a high-performance N-channel FET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 100 V
  • Continuous Drain Current (Id): 18A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 9A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Mounting: SMD (SMT)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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