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2SK4150TZ-E
Same model may have multiple batches, images only for reference.

2SK4150TZ-E

Part No 2SK4150TZ-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description 2SK4150TZ - N-CHANNEL POWER MOSF  /  N-Channel 250 V 400mA (Ta) 750mW (Ta) Through Hole TO-92
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 5.7Ohm @ 200mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.7 nC @ 4 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 25 V
Power Dissipation (Max) 750mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA)
RoHS Status RoHS non-compliant
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-2SK4150TZ-E
Standard Package 1
Win Source Part Number 987346-2SK4150TZ-E
Ultra Librarian 3D Model Ultra Librarian 2SK4150TZ-E CAD Model

Description

The 2SK4150TZ-E is a MOSFET transistor IC from Renesas.

  • Category: Discrete Semiconductor Products
  • Series: Transistors - FETs, MOSFETs - Single
  • FET Type: N-channel
  • Drain to Source Voltage (Vdss): 250 V
  • Continuous Drain Current (Id) @ 25°C: 400mA (Ta)
  • Maximum Resistance (Rds On): 5.7Ohm @ 200mA, 4V
  • Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
  • RoHS Status: Non-compliant
  • Status: Obsolete

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