The 3SK317ZR-TL-E is an N-channel dual gate MOS field effect transistor (MOSFET) from Renesas Electronics America. This RF MOSFET is designed for high-frequency amplifier applications up to VHF and UHF bands. Its dual-gate construction allows for improved gain control, reduced feedback capacitance, and enhanced stability in RF circuits.

Applications

• VHF/UHF Amplifiers
• Mixers
• Oscillators
• RF Front-Ends
• CATV Systems

Features

• N-channel dual gate MOSFET
• High power gain
• Low noise figure
• Excellent linearity
• Small SOT-343 package for surface mounting
• High input impedance
• Low feedback capacitance

Benefits

• Improved RF amplifier performance due to high gain and low noise.
• Enhanced circuit stability and reduced unwanted oscillations.
• Simplified gain control in amplifier circuits.
• Compact design suitable for miniaturized electronic devices.
• Suitable for high-frequency applications due to its superior high-frequency characteristics.
• Reduces the number of external components required for gain control.

Additional Details

The 3SK317ZR-TL-E offers excellent performance characteristics in RF applications. Key specifications include a high forward transfer admittance and low noise figure which make it suitable for use in sensitive receiver circuits. The device is supplied in a small SOT-343 package allowing for high-density mounting on printed circuit boards. It is designed for operation with a supply voltage typically between 5V and 12V, depending on the specific application and desired performance.

The dual-gate structure offers enhanced control over the gain of the amplifier stage. By applying a voltage to the second gate, the gain can be adjusted dynamically. This feature is particularly useful in automatic gain control (AGC) circuits, where the gain of the amplifier is automatically adjusted to maintain a constant output signal level. The 3SK317ZR-TL-E is designed for high-volume production and is RoHS compliant.