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Same model may have multiple batches, images only for reference.
FS30AS-2-T13#B00 Renesas Electronics America
Same model may have multiple batches, images only for reference.

FS30AS-2-T13#B00

Part No FS30AS-2-T13#B00
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description HIGH SPEED SWITCHING N-CHANNEL / N-Channel 100 V 30A (Tc) 35W (Tc) Surface Mount MP-3A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 10 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package MP-3A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status Not applicable
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8542.39.0001
Other Names RENRNSFS30AS-2-T13#B00,2156-FS30AS-2-T13#B00
Standard Package 3,000
Win Source Part Number 1000843-FS30AS-2-T13#B00
Ultra Librarian 3D Model Ultra Librarian FS30AS-2-T13#B00 CAD Model

Description

This MOSFET (Metal Oxide) transistor is designed for use in N-Channel FET type applications.

  • Vdss: 100 V
  • Id @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Power Dissipation (Max): 35W (Tc)
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Ciss (Max) @ Vds: 1250 pF @ 10 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • REACH Status: Vendor Undefined
  • HTSUS: 8542.39.0001
  • Manufacturer: Renesas Electronics America Inc
  • RoHS Status: Not applicable

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