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Same model may have multiple batches, images only for reference.
H5N5015P-E
Same model may have multiple batches, images only for reference.

H5N5015P-E

Part No H5N5015P-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 500V 32A 3-Pin(3+Tab) TO-3P Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 32 A
Drain to Source Voltage (Vdss) 500 V
Lead Free Yes
RoHS Compliant
Win Source Part Number 1027099-H5N5015P-E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian H5N5015P-E CAD Model

Description

The Renesas Electronics America H5N5015P-E is a transistor from the FETs (Field Effect Transistors) - MOSFETs - RF family of discrete semiconductor products. The product has a drain to source voltage (Vdss) of 500 V and is a low popularity item with a shortage supply and demand status. It is an alternative part for IRFPS37N50APBF, IPP50R380CEXKSA1, FQL40N50, SIHS36N50D-E3, STB45N50DM2AG, and FQL40N50F. The product is lead-free and RoHS compliant with a continuous drain current (ID) of 32 A.

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