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HAT1093C-EL-E

Part No HAT1093C-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description HAT1093C - P-CHANNEL POWER MOSFE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 54mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 10 V
Power Dissipation (Max) 900mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 6-CMFPAK
Package / Case 6-SMD, Flat Leads
Standard Package 1,200 pcs
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 595963-HAT1093C-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT1093C-EL-E CAD Model

Description

The 595963-HAT1093C-EL-E is a single P-Channel FET MOSFET designed for discrete semiconductor applications.

  • Channel Type: P-Channel FET
  • Packaging: bulk
  • Standard Package: 1,200 pieces
  • Drain-to-Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id) @ 25°C: 3A
  • Rds On (Max) @ 1.5A, 4.5V: 54mOhm
  • Manufacturer: Renesas Electronics America
  • Product Series: obsolete
  • Mounting Type: surface mount
  • Gate Charge (Qg) @ 4.5V: 11nC
  • Applications: FET and MOSFET applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4245 $59.4300
335+ $0.3483 $116.6805
515+ $0.3375 $173.8125
710+ $0.3266 $231.8860
915+ $0.3157 $288.8655
1,225+ $0.2830 $346.6750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,430 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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