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Same model may have multiple batches, images only for reference.
HAT2096H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT2096H-EL

Part No HAT2096H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A LFPAK
Datasheet
HAT2096H-EL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067788-HAT2096H-EL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2096H-EL CAD Model

Description

The Renesas Electronics America MOSFET is a high-performance N-channel power MOSFET.

  • Power Dissipation (Max): 20W (Tc)
  • Package: LFPAK
  • Mounting Type: SMD / SMT
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Ta) @ 25°C
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 2200pF @ 10V
  • Rds On (Max): 5.3 mOhm @ 20A, 10V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.8861 $61.9749
21+ $5.6503 $118.6563
32+ $5.4747 $175.1904
44+ $5.2980 $233.1120
57+ $5.1213 $291.9141
76+ $4.5911 $348.9236
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,230 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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