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Same model may have multiple batches, images only for reference.
HAT2160H-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2160H-EL-E

Part No HAT2160H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A LFPAK
Datasheet
HAT2160H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 54nC @ 4.5V
Max Input Capacitance 7750pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 204569-HAT2160H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2160H-EL-E CAD Model

Description

The Renesas Electronics America HAT2160H-EL-E is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 30W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 60A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 54nC @ 4.5V
  • Maximum Rds On: 2.6 mOhm @ 30A, 10V
  • Package: LFPAK
  • Dimensions: SC-100, SOT-669
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5672 $54.8520
80+ $1.2860 $102.8800
125+ $1.2458 $155.7250
170+ $1.2056 $204.9520
215+ $1.1654 $250.5610
290+ $1.0448 $302.9920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,830 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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