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Same model may have multiple batches, images only for reference.
HAT2196C-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2196C-EL-E

Part No HAT2196C-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description HAT2196C - N-CHANNEL POWER MOSFE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 58mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
Power Dissipation (Max) 850mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 6-CMFPAK
Package / Case 6-SMD, Flat Leads
Standard Package 1 pcs
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 141250-HAT2196C-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2196C-EL-E CAD Model

Description

The HAT2196C-EL-E is an N-channel MOSFET transistor, part number 141250-HAT2196C-EL-E, used in discrete semiconductor applications.

  • Component Type: N-Channel MOSFET Transistor
  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 2.5A
  • Rds On: 58mOhm @ 1.3A, 4.5V
  • Gate Threshold Voltage: 1.4V @ 1mA
  • Power Dissipation: 850mW
  • Mounting Type: Surface Mount
  • Package: 6-SMD, Flat Leads
  • Gate Charge: 2.8nC
  • Input Capacitance: 270pF
  • Operating Temperature: Up to 150°C

This MOSFET transistor is suitable for various electronic circuits that require switching or amplification.

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275+ $0.4225 $116.1875
425+ $0.4093 $173.9525
585+ $0.3962 $231.7770
755+ $0.3829 $289.0895
1,010+ $0.3433 $346.7330
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