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Same model may have multiple batches, images only for reference.
HAT2197R Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2197R

Part No HAT2197R
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8SOP
Datasheet
HAT2197R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 2650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 6.7 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 204575-HAT2197R
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian HAT2197R CAD Model

Description

The Renesas Electronics America HAT2197R is an N-Channel MOSFET transistor designed for power management in portable devices, computers, and computer peripherals.

  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A (Ta) @ 25°C
  • Rds On (Max): 6.7 mOhm @ 8A, 10V
  • Package: 8-SOP
  • Gate-Source Voltage (Max): ±20V
  • Drive Voltage: 4.5V to 10V
  • Popularity: Medium

This transistor is widely used in various applications due to its balance in supply and demand status.

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71+ $4.8903 $347.2113
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