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HAT2279N-EL-E

Part No HAT2279N-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A 8LFPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Rds On (Max) @ Id, Vgs 12.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3520 pF @ 10 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-LFPAK-iV
Package / Case 8-PowerSOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 141289-HAT2279N-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2279N-EL-E CAD Model

Description

The 141289-HAT2279N-EL-E is an obsolete N-channel MOSFET transistor manufactured by Renesas Electronics America.

  • Drain-to-Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 30A @ 25°C
  • On-Resistance (Rds On): 12.3mOhm @ 15A and 10V
  • Gate Charge (Qg): 60nC @ 10V
  • Input Capacitance (Ciss): 3520pF @ 10V
  • Mounting: Surface Mount Technology
  • Package: 8-PowerSOIC
  • ECCN: EAR99
  • HTSUS Code: 8541.29.0095

Although the 141289-HAT2279N-EL-E is obsolete, you can explore other MOSFET transistor options from Renesas Electronics America for your circuit design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $37.3446 $74.6892
4+ $30.6422 $122.5688
6+ $29.6847 $178.1082
9+ $28.7272 $258.5448
11+ $27.7697 $305.4667
14+ $24.8972 $348.5608
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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