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IDT6116S120DB

Part No IDT6116S120DB
Manufacturer Renesas Electronics America
Catalog Custom Parts (E - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1208099-IDT6116S120DB
Categories Custom Parts
Manufacturer Renesas Electronics America
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IDT6116S120DB CAD Model

Description

The IDT6116S120DB is a high-speed CMOS static RAM (SRAM) device from Renesas Electronics (formerly IDT). It is designed for applications requiring fast access times and low power consumption. SRAMs are used for temporary data storage in various electronic systems where speed is critical.

Applications

  • Cache Memory: Used as cache memory in microprocessors and microcontrollers to improve performance.
  • Buffer Memory: Employed as buffer memory in communication systems and data acquisition systems for temporary storage of data.
  • Graphics Memory: Utilized in graphics cards and display systems for fast frame buffer access and manipulation.
  • Embedded Systems: Integrated into various embedded systems requiring fast and reliable data storage, such as industrial control systems and medical devices.
  • Networking Equipment: Used in routers, switches, and other networking devices for high-speed data buffering and processing.

Features

  • Fast Access Time: Provides very fast data access speeds, in this case 120ns as suggested by the part number.
  • Low Power Consumption: Consumes minimal power during operation, making it suitable for battery-powered applications.
  • CMOS Technology: Utilizes CMOS technology for high performance, low power dissipation and high noise immunity.
  • Wide Operating Voltage Range: Operates over a wide range of supply voltages, providing design flexibility.
  • Data Retention Capability: Retains data even when power is removed, ensuring data integrity.

Benefits

  • Improved System Performance: Enhances the speed and efficiency of data processing by providing fast memory access.
  • Reduced Power Consumption: Extends battery life in portable devices and reduces overall system power consumption.
  • Increased System Reliability: Provides reliable data storage and retrieval, ensuring system stability.
  • Simplified System Design: Simplifies memory system design due to its ease of integration.
  • Cost-Effective Solution: Offers a cost-effective memory solution for various applications requiring high speed and low power.

Technical Specifications: Key parameters include access time, supply voltage, operating current, standby current, and operating temperature range. Refer to the official Renesas datasheet for detailed specifications and performance characteristics of the IDT6116S120DB.

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