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Same model may have multiple batches, images only for reference.
NESG3031M14-T3-A Real Image
Same model may have multiple batches, images only for reference.

NESG3031M14-T3-A

Part No NESG3031M14-T3-A
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description RF SMALL SIGNAL TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.3V
Noise Figure (dB Typ @ f) 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain 7.5dB ~ 16dB
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 6mA, 2V
Current - Collector (Ic) (Max) 35mA
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Supplier Device Package 4L2MM, M14
Standard Package 10,000 pcs
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 252190-NESG3031M14-T3-A
Ultra Librarian 3D Model Ultra Librarian NESG3031M14-T3-A CAD Model

Description

The NESG3031M14-T3-A is a bipolar RF transistor from Renesas Electronics America.

  • Category: Discrete semiconductor products
  • Sub-Category: Transistors - bipolar (BJT) - bipolar RF transistors
  • Part Number: 252190-NESG3031M14-T3-A
  • Packaging: Bulk
  • Standard Package Quantity: 10,000 pieces
  • Maximum Power Rating: 150mW
  • Maximum Voltage (Collector-Emitter Breakdown): 4.3V
  • Maximum Collector Current: 35mA
  • Gain: 7.5dB to 16dB
  • Transistor Type: NPN
  • DC Current Gain (hFE): 220 @ 6mA and 2V
  • Frequency Transition Range: Not specified
  • Noise Figure: Between 0.6dB and 1.5dB @ frequencies ranging from 2.4GHz to 5.8GHz
  • Mounting Type: Surface mountable
  • Package: 4-SMD, flat leads
  • Supplier Device Package: 4L2MM, M14
  • ECCN Status: EAR99
  • HTSUS Code: 8541.21.0075
If you require this RF transistor for a specific application, it is recommended to contact authorized distributors or manufacturers for availability and support.

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