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Same model may have multiple batches, images only for reference.
NP109N055PUK-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP109N055PUK-E1-AY

Part No NP109N055PUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 110A TO-263
Datasheet
NP109N055PUK-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 189nC @ 10V
Max Input Capacitance 11250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 55A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 115836-NP109N055PUK-E1-AY
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NP109N055PUK-E1-AY CAD Model

Description

The Renesas Electronics America NP109N055PUK-E1-AY is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.8W (Ta) and 250W (Tc)
  • Popularity: medium
  • Supply and demand status: balance
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 110A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 189nC @ 10V

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49+ $2.3996 $117.5804
75+ $2.3247 $174.3525
103+ $2.2496 $231.7088
133+ $2.1746 $289.2218
178+ $1.9496 $347.0288
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