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Same model may have multiple batches, images only for reference.
NP110N03PUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP110N03PUG-E1-AY

Part No NP110N03PUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V MP-25ZP/TO-263 / Trans MOSFET N-CH 30V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet
NP110N03PUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 380nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 24600pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.8W (Ta), 288W (Tc)
Rds On (Maximum) @ Id, Vgs 1.5 mOhm @ 55A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 790768-NP110N03PUG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Family Name NP110N03PUG
Introduction Date January 05, 2004
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian NP110N03PUG-E1-AY CAD Model

Description

The Renesas Electronics America NP110N03PUG-E1-AY is an N-channel type MOSFET electronic component.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Continuous Drain Current (Id): 110A (Tc) @ 25°C
  • Drain-Source Voltage: 30V
  • Input Capacitance (Ciss): 24600pF (maximum) @ 25V
  • Gate Charge (Qg): 380nC (maximum) @ 10V
  • Gate-Source Voltage (Vgs): ±20V (maximum)
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Operating Temperature Range: 175°C (TJ)
  • Mounting: SMD
  • ECCN: EAR99
  • Estimated EOL Date: 2022
  • Supply and Demand Status: Balance

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