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Same model may have multiple batches, images only for reference.
NP35N04YUG-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP35N04YUG-E1-AY

Part No NP35N04YUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 35A 8HSON
Datasheet
NP35N04YUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 77W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 17.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSON
Dimension 8-SMD, Flat Lead Exposed Pad
Win Source Part Number 1083326-NP35N04YUG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP35N04YUG-E1-AY CAD Model

Description

The Renesas Electronics America MOSFET is a high-performance N-Channel transistor designed for use in various electronic applications.

  • Channel Type: N-Channel
  • Power Dissipation: 1W (Ta) and 77W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 35A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 54nC @ 10V
  • Maximum Rds On: 10 mOhm @ 17.5A, 10V
  • Package: 8-SMD, Flat Lead Exposed Pad

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