The Renesas Electronics America NP36P06KDG-E1-AY is a P-Channel MOSFET from Renesas Electronics America, featuring a drain-source breakdown voltage of 60V and a continuous drain current of 36A (Tc) @ 25°C.
- Channel Type: P-Channel
- Drain-Source Breakdown Voltage: 60V
- Continuous Drain Current: 36A (Tc) @ 25°C
- Application: Discrete Semiconductor Products
- Power Dissipation: 1.8W (Ta) and 56W (Tc)
- Gate-Source Threshold Voltage: 2.5V @ 1mA
- Maximum Gate Charge: 54nC @ 10V
- Maximum Input Capacitance: 3100pF @ 10V
- Package: TO-263
- Temperature Range: 175°C (TJ)
- Popularity: High
- Supply and Demand Status: Limited
- Alternatives: FQB47P06, FQB47P06TM, FQB47P06TM-AM002, and SPB80P06P E3045A