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Same model may have multiple batches, images only for reference.
NP60N03SUG-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP60N03SUG-E1-AY

Part No NP60N03SUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A TO-252
Datasheet
NP60N03SUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 105W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 30A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 132647-NP60N03SUG-E1-AY
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NP60N03SUG-E1-AY CAD Model

Description

The Renesas Electronics America 132647-NP60N03SUG-E1-AY is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 60A (Tc) at 25°C.

  • Maximum Power Dissipation: 1.2W (Ta) and 105W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 3.8 mOhm @ 30A, 10V
  • Package: TO-252 (MP-3ZK)
  • Popularity: medium
  • Supply and Demand: limited

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Quantity Unit Price Ext. Price
17+ $3.5867 $60.9739
40+ $2.9429 $117.7160
61+ $2.8510 $173.9110
84+ $2.7590 $231.7560
109+ $2.6670 $290.7030
145+ $2.3911 $346.7095
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Availability: 11,900 pieces
MOQ: 17 pcs
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