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Same model may have multiple batches, images only for reference.
NP60N055MUK-S18-AY Real Image
Same model may have multiple batches, images only for reference.

NP60N055MUK-S18-AY

Part No NP60N055MUK-S18-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 60A TO-220
Datasheet
NP60N055MUK-S18-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 3750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 105W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1083343-NP60N055MUK-S18-AY
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian NP60N055MUK-S18-AY CAD Model

Description

The Renesas MOSFET is a discrete semiconductor product designed for use in various applications.

  • Win Source Part Number: 1083343-NP60N055MUK-S18-AY
  • Category: MOSFET
  • Manufacturer: Renesas Electronics America
  • Popularity Rating: Medium
  • Package: Bulk
  • Mounting: Through-Hole

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