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Same model may have multiple batches, images only for reference.
NP82N03PUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP82N03PUG-E1-AY

Part No NP82N03PUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 82A TO-263
Datasheet
NP82N03PUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 9080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 41A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083353-NP82N03PUG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP82N03PUG-E1-AY CAD Model

Description

The NP82N03PUG-E1-AY is a N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 82A (Tc) @ 25°C. Renesas Electronics America.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 82A (Tc) @ 25°C
  • Maximum Power Dissipation: 1.8W (Ta) and 143W (Tc)
  • Drive Voltage: 10V
  • Operating Temperature: 175°C (TJ)
  • Case/Package: TO-263 (D2Pak)
  • Rds On: 2.8 mOhm @ 41A, 10V

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