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Same model may have multiple batches, images only for reference.
NP88N04NUG-S18-AY
Same model may have multiple batches, images only for reference.

NP88N04NUG-S18-AY

Part No NP88N04NUG-S18-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 88A TO-262
Datasheet
NP88N04NUG-S18-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 15000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 44A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1083357-NP88N04NUG-S18-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP88N04NUG-S18-AY CAD Model

Description

The NP88N04NUG-S18-AY is an N-channel MOSFET that is part of the discrete semiconductor products category.

  • Manufacturer: Renesas Electronics America
  • Power Dissipation: 1.8W (Ta), 200W (Tc)
  • Drive Voltage: 10V (max Rds On, min Rds On)
  • Package: TO-262 case/package
  • Mounting Option: Through-hole
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 88A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 250nC @ 10V
  • Maximum Input Capacitance: 15000pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3.4 mOhm @ 44A, 10V
  • Dimension: TO-262AA
  • Status: Obsolete (EOL)
  • Popularity: Medium

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