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NP90N04VDG-E1-AY

Part No NP90N04VDG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Rds On (Max) @ Id, Vgs 4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
Power Dissipation (Max) 1.2W (Ta), 105W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649349-NP90N04VDG-E1-AY
Ultra Librarian 3D Model Ultra Librarian NP90N04VDG-E1-AY CAD Model

Description

The 649349-NP90N04VDG-E1-AY is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Renesas Electronics America
  • Channel Type: N-Channel MOSFET
  • Vdss: 40V
  • Id: 90A @ 25°C
  • Rds On: 4mOhm @ 45A, 10V Vgs
  • Vgs(th): 2.5V @ 250μA
  • Power Dissipation: 1.2W @ 105°C
  • Package: TO-252-3 (D-Pak)
  • Mounting Type: Surface Mount
  • Qg: 135nC @ 10V Vgs
  • Ciss: 6900pF @ 25V Vds
  • Operating Temperature: Up to 175°C (TJ)
  • Packaging: Bulk
  • Standard Package: 2,500 pcs

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