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NP90N04VUK-E1-AY

Part No NP90N04VUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO-220
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 5850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 147W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 45A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083366-NP90N04VUK-E1-AY
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian NP90N04VUK-E1-AY CAD Model

Description

The Renesas Electronics America NP90N04VUK-E1-AY is an N-channel MOSFET transistor with a high continuous drain current of 90A at 25°C.

  • Type: N-channel MOSFET
  • Continuous Drain Current @ 25°C: 90A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 2.8 mOhm @ 45A, 10V
  • Popularity: Medium
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6001 $64.0040
90+ $1.3130 $118.1700
140+ $1.2720 $178.0800
190+ $1.2309 $233.8710
245+ $1.1899 $291.5255
325+ $1.0668 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,200 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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