The RD74LVC373BTELL is an octal D-type transparent latch manufactured by Renesas Electronics America. It features three-state outputs and is designed for high-speed, low-power applications, operating within a voltage range of 1.65V to 3.6V. This device is commonly used in memory address latching, data storage, and data bus isolation applications.

Applications:

• Memory address latching
• Data storage
• Address buffering
• Data bus isolation
• Microprocessor systems

Features:

• Wide Operating Voltage Range: 1.65V to 3.6V operation supports diverse system requirements.
• High-Speed Operation: Provides fast propagation delays for efficient data storage and retrieval.
• Three-State Outputs: Allows multiple devices to share a common bus, minimizing loading effects.
• Low Power Consumption: Minimizes energy consumption for extended battery life or reduced system heat.
• Edge-Triggered D-Type Inputs: Ensures reliable data capture on the rising edge of the clock signal.
• CMOS Compatible Inputs: Compatible with standard CMOS logic levels for simplified integration.

Benefits:

• Improved System Performance: Fast propagation delays contribute to overall system speed and efficiency.
• Reduced System Power Consumption: Low power operation helps minimize energy usage and heat generation.
• Flexible System Design: Three-state outputs allow for easy integration into bus-oriented systems.
• Reliable Data Storage: Edge-triggered inputs ensure accurate and reliable data capture.
• Simplified System Integration: CMOS compatible inputs simplify interfacing with other logic devices.

Additional Details:

The RD74LVC373BTELL features eight D-type latches with a common enable (LE) input. When LE is high, the Q outputs follow the data at the D inputs. When LE goes low, the data present at the D inputs is latched and retained at the Q outputs. The output enable (OE) input, when high, disables the outputs, placing them in a high-impedance state. The device is available in a TSSOP package. The propagation delay is typically in the range of 3-5 ns. The device is also ESD protected to prevent damage from electrostatic discharge events.