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Same model may have multiple batches, images only for reference.
RJH1CF4RDPQ-80#T2 Real Image
Same model may have multiple batches, images only for reference.

RJH1CF4RDPQ-80#T2

Part No RJH1CF4RDPQ-80#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 1200V 40A 156.2W TO247 / IGBT 1200 V 40 A 156.2 W Through Hole TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Renesas Electronics America
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 40 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 156.2 W
Input Type Standard
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number RJH1CF4
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891735-RJH1CF4RDPQ-80#T2
Ultra Librarian 3D Model Ultra Librarian RJH1CF4RDPQ-80#T2 CAD Model

Description

The 891735-RJH1CF4RDPQ-80#T2 is a single IGBT (Insulated Gate Bipolar Transistor) designed for use in discrete semiconductor products.

  • Category: Transistors - IGBTs
  • Maximum Power: 156.2 W
  • Voltage Breakdown: 1200 V
  • Maximum Collector Current: 40 A
  • Vce(on): 2.5V @ 15V, 20A
  • Input: Standard
  • Mounting: Through hole
  • Package Type: TO-247-3
  • Temperature Range: -40°C to 150°C
  • Manufacturer: Renesas Electronics America
  • Status: Active

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