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Same model may have multiple batches, images only for reference.
RJH1CF7RDPQ-80#T2 Real Image
Same model may have multiple batches, images only for reference.

RJH1CF7RDPQ-80#T2

Part No RJH1CF7RDPQ-80#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 1200V 60A 250W TO247 / IGBT 1200 V 60 A 250 W Through Hole TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Renesas Electronics America
Package Tube
Product Status Last Time Buy
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 35A
Power - Max 250 W
Input Type Standard
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number RJH1CF7
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891738-RJH1CF7RDPQ-80#T2
Ultra Librarian 3D Model Ultra Librarian RJH1CF7RDPQ-80#T2 CAD Model

Description

The RJH1CF7RDPQ-80#T2 is a single IGBT (Insulated Gate Bipolar Transistor) designed for discrete semiconductor applications.

  • Maximum Power: 250 W
  • Voltage Breakdown: 1200 V
  • Maximum Collector Current: 60 A
  • Vce(on): 2.4V @ 15V, 35A
  • Input Type: Standard
  • Mounting: Through-hole
  • Package/Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Manufacturer: Renesas Electronics America
  • Status: Last time buy
  • MSL Level: 1 (Unlimited)

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