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Same model may have multiple batches, images only for reference.
RJH60D1DPP-M0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJH60D1DPP-M0#T2

Part No RJH60D1DPP-M0#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 20A 20.8W TO220FL
Datasheet
RJH60D1DPP-M0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 10A
Maximum Power Dissipation 30W
Total Switching Energy(Ets) 100μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 13nC
Turn-on and Turn-off delay time 30ns/42ns
Testing Conditions 300V, 10A, 5 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FL
Win Source Part Number 062525-RJH60D1DPP-M0#T2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJH60D1DPP-M0#T2 CAD Model

Description

The RJH60D1DPP-M0#T2 is an active, through-hole IGBT semiconductor device from Renesas Electronics America.

  • Designed for: Use in a range of electronic devices and equipment and is suitable for high power and voltage applications.
  • Maximum collector-emitter breakdown voltage: 600V
  • Maximum power dissipation: 30W
  • Total switching energy (on): 100μJ
  • Total switching energy (off): 130μJ
  • Turn-on delay time: 30ns
  • Turn-off delay time: 42ns

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
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Availability: 57,000 pieces
MOQ: 90 pcs
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