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Same model may have multiple batches, images only for reference.
RJH60D5BDPQ-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJH60D5BDPQ-E0#T2

Part No RJH60D5BDPQ-E0#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 75A 200W TO-247 / Trans IGBT Chip N-CH 600V 75A 200000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
RJH60D5BDPQ-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 75A
Vce(on) (Maximum) @ Vge, Ic 2.2V @ 15V, 37A
Power - Max 200W
Switching Energy 400μJ (on), 810μJ (off)
Input Type Standard
Gate Charge 78nC
Td (on/off) @ 25°C 50ns/130ns
Test Condition 300V, 37A, 5 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 793206-RJH60D5BDPQ-E0#T2
Popularity Medium
Supply and Demand Status Limited
Family Name RJH60D5BDPQ-E0
Introduction Date July 09, 2012
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJH60D5BDPQ-E0#T2 CAD Model

Description

The RJH60D5BDPQ-E0 from Renesas Electronics America is an IGBT transistor with a maximum power of 200W.

  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Current - Collector (Ic) (Maximum): 75A
  • IGBT Type: trench
  • Package Type: TO-247-3
  • Reverse Recovery Time (trr): 25ns
  • Gate Charge: 78nC
  • Switching Energy: 400μJ (on), 810μJ (off)
  • Gate-Source Voltage (Vgs): ±30V
  • Mounting Type: through-hole
  • Test Condition: 300V, 37A, 5 Ohm, 15V

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