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Same model may have multiple batches, images only for reference.
RJH60D7BDPQ-E0#T2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH60D7BDPQ-E0#T2

Part No RJH60D7BDPQ-E0#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 90A 300W TO-247
Datasheet
RJH60D7BDPQ-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 90A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 50A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 700μJ (on), 1.4mJ (off)
Input Type Standard
Gate Charge 125nC
Turn-on and Turn-off delay time 60ns/180ns
Testing Conditions 300V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 135144-RJH60D7BDPQ-E0#T2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJH60D7BDPQ-E0#T2 CAD Model

Description

The RJH60D7BDPQ-E0#T2 is an active, through-hole IGBT semiconductor device from Renesas Electronics America.

  • Designed for: Use in a range of electronic devices and equipment and is suitable for high power and voltage applications.
  • Maximum collector-emitter breakdown voltage: 600V
  • Maximum power dissipation: 300W
  • Total switching energy (on): 700μJ
  • Total switching energy (off): 1.4mJ
  • Turn-on delay time: 60ns
  • Turn-off delay time: 180ns
  • Cross-referenced with: APT54GA60BD30, RJH60D7DPM-00-T1 and RJH60D6DPM-00-T1.

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