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Same model may have multiple batches, images only for reference.
RJH60F5DPQ-A0#T0 Real Image
Same model may have multiple batches, images only for reference.

RJH60F5DPQ-A0#T0

Part No RJH60F5DPQ-A0#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 80A 260.4W TO247A / IGBT Trench 600 V 80 A 260.4 W Through Hole TO-247A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Power - Max 260.4 W
Input Type Standard
Td (on/off) @ 25°C 53ns/105ns
Test Condition 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247A
Base Product Number RJH60F5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 961214-RJH60F5DPQ-A0#T0
Ultra Librarian 3D Model Ultra Librarian RJH60F5DPQ-A0#T0 CAD Model

Description

The Renesas RJH60F5DPQ-A0#T0 is a single IGBT transistor that is used in various electronic devices.

  • Power-Max: 260.4W
  • Reverse Recovery Time (trr): 90ns
  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Switching Energy: Not specified
  • Input Type: Standard
  • Td (on/off) @ 25°C: 53ns/105ns
  • Test Condition: 400V, 30A, 5Ohm, 15V
  • Mounting Type: Through hole
  • Package/Case: TO-247-3
  • Temperature Range when Operating: 150°C (TJ)
  • Supplier Device Package: TO-247A

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