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Same model may have multiple batches, images only for reference.
RJK0225DNS-00#J5 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK0225DNS-00#J5

Part No RJK0225DNS-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description RJK0225 - P Channel Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 10 V
Power Dissipation (Max) 30W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-HVSON (3x3.3)
Package / Case 8-PowerVDFN
Standard Package 1 pcs
Win Source Part Number 295129-RJK0225DNS-00#J5
Ultra Librarian 3D Model Ultra Librarian RJK0225DNS-00#J5 CAD Model

Description

The RJK0225DNS-00#J5 is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Renesas Electronics America.

  • Category: FETs, MOSFETs - Single FETs, MOSFETs
  • Type: Single FETs, MOSFETs
  • Package: Bulk
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Vdss: 25V
  • Id (at 25°C): 30A
  • Rds On (Max) (at Id, Vgs): 7.2mOhm @ 15A, 10V
  • Vgs(th) (at Id): 2.5V @ 1mA
  • Power Dissipation: 30W @ 150°C
  • Vgs: +16V, -12V
  • Status: Obsolete
  • Application: Various electronic devices and systems

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