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Same model may have multiple batches, images only for reference.
RJK0329DPB-01#J0 Real Image
Same model may have multiple batches, images only for reference.

RJK0329DPB-01#J0

Part No RJK0329DPB-01#J0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A LFPAK / N-Channel 30 V 55A (Ta) 60W (Tc) Surface Mount LFPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Rds On (Max) @ Id, Vgs 2.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 5330 pF @ 10 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK
Package / Case SC-100, SOT-669
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 932043-RJK0329DPB-01#J0
Ultra Librarian 3D Model Ultra Librarian RJK0329DPB-01#J0 CAD Model

Description

The RJK0329DPB-01#J0 is a single N-channel MOSFET transistor from Renesas Electronics America.

  • Use: Discrete semiconductor products
  • Vdss: 30V
  • Id @ 25°C: 55A
  • Rds On (Max): 2.3mOhm @ 27.5A and 10V
  • Vgs(th): 2.5V @ 1mA
  • Power Dissipation: 60W
  • Mounting: Surface mount applications
  • Package/Case: SC-100, SOT-669
  • Packaging: Bulk
  • Standard Package: 2,500 pieces
  • Qg @ Vgs: 35nC @ 4.5V
  • Ciss @ Vds: 5330pF @ 10V
  • Operating Temperature: Up to 150°C
  • HTSUS Code: 8541.29.0095
  • Product Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.5416 $54.1664
10+ $11.1111 $111.1110
14+ $10.7639 $150.6946
20+ $10.4167 $208.3340
25+ $10.0694 $251.7350
34+ $9.0278 $306.9452
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