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RJK0395DPA-00#J5A

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Part No	RJK0395DPA-00#J5A
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 30A 8WPAK / N-Channel 30 V 30A (Ta) 30W (Tc) Surface Mount 8-WPAK
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Renesas Electronics America Inc
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Rds On (Max) @ Id, Vgs	7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 10 V
Power Dissipation (Max)	30W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	8-WPAK
Package / Case	8-WFDFN Exposed Pad
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-RJK0395DPA-00#J5A-RETR,RENRNSRJK0395DPA-00#J5A
Standard Package	3,000
Win Source Part Number	1114693-RJK0395DPA-00#J5A
Ultra Librarian 3D Model	Ultra Librarian RJK0395DPA-00#J5A CAD Model

Alternative Products

Description

The Renesas MOSFET (Metal Oxide) N-Channel transistor is a high-performance component that offers a drain to source voltage (Vdss) of 30 V and a current - continuous drain (Id) @ 25°C of 30A (Ta).

Rds On (Max) @ Id, Vgs: 7.7mOhm @ 15A, 10V
Package/Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WPAK
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Temperature Range: Up to 150°C (TJ)
ECCN: EAR99 compliant

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