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Same model may have multiple batches, images only for reference.
RJK03B7DPA-00#J5A Real Image
Same model may have multiple batches, images only for reference.

RJK03B7DPA-00#J5A

Part No RJK03B7DPA-00#J5A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A 8WPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Rds On (Max) @ Id, Vgs 7.8mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 10 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK
Package / Case 8-PowerWDFN
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 295288-RJK03B7DPA-00#J5A
Ultra Librarian 3D Model Ultra Librarian RJK03B7DPA-00#J5A CAD Model

Description

The 295288-RJK03B7DPA-00#J5A is a N-Channel MOSFET transistor designed for various applications in the field of discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A @ 25°C
  • On-Resistance (Rds On): 7.8mOhm @ 15A and 10V
  • Power Dissipation: up to 30W
  • Package: 8-PowerWDFN
  • Mounting Type: surface mount
  • Gate Charge (Qg): 11nC @ 4.5V
  • Input Capacitance (Ciss): 1670pF @ 10V
  • Operating Temperature Range: up to 150°C
  • Manufacturer: Renesas Electronics America
  • Product Status: obsolete

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