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Same model may have multiple batches, images only for reference.
RJK0855DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK0855DPB-00#J5

Part No RJK0855DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A LFPAK
Datasheet
RJK0855DPB-00#J5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2550pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 132872-RJK0855DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK0855DPB-00#J5 CAD Model

Description

The Renesas Electronics America 132872-RJK0855DPB-00#J5 FET is a single discrete semiconductor product that is used in various electronic devices. The supply and demand status of this product is limited.

  • Design: Designed to provide efficient and reliable performance in electronic devices
  • Maximum Power Dissipation: 60W (Tc)
  • Continuous Drain Current: 30A (Ta) @ 25°C

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