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Same model may have multiple batches, images only for reference.
RJK0856DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK0856DPB-00#J5

Part No RJK0856DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 35A LFPAK
Datasheet
RJK0856DPB-00#J5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 40nC @ 10V
Max Input Capacitance 3000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 17.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 133707-RJK0856DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK0856DPB-00#J5 CAD Model

Description

The RJK0856DPB-00#J5 is a Renesas Electronics America electronic component that is suitable for use in various electronic devices and systems. The supply and demand status is limited.

  • Design: Designed with high-quality materials and advanced technology to deliver reliable and efficient performance
  • Technology: MOSFET technology
  • Polarity: N-channel polarity
  • Maximum Rds On @ Id,Vgs: 8.9 mOhm @ 17.5A, 10V

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