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Same model may have multiple batches, images only for reference.
RJK1002DPP-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK1002DPP-E0#T2

Part No RJK1002DPP-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO220
Datasheet
RJK1002DPP-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 94nC @ 10V
Max Input Capacitance 6450pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 7.6 mOhm @ 35A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1092289-RJK1002DPP-E0#T2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK1002DPP-E0#T2 CAD Model

Description

The Renesas Electronics America MOSFET is a high-performance N-channel power MOSFET that is designed for use in a variety of applications.

  • Maximum Power Dissipation: 30W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 70A (Ta)
  • Maximum Gate Charge: 94nC @ 10V
  • Maximum Input Capacitance: 6450pF @ 10V
  • Maximum Rds On at Id,Vgs: 7.6 mOhm @ 35A, 10V
  • Package: TO-220FP
  • Mounting: Through Hole
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Temperature Range: -40°C to 150°C (TJ)
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $103.2466 $103.2466
2+ $100.0195 $200.0390
3+ $96.7936 $290.3808
4+ $93.5666 $374.2664
5+ $83.8877 $419.4385
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