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Same model may have multiple batches, images only for reference.
RJK5015DPK-00#T0
Same model may have multiple batches, images only for reference.

RJK5015DPK-00#T0

Part No RJK5015DPK-00#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 25A TO-3P / Trans MOSFET N-CH Si 500V 25A Tube
Datasheet
RJK5015DPK-00#T0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 66nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 150W (Ta)
Rds On (Maximum) @ Id, Vgs 240 mOhm @ 12.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-3P
Package TO-3P-3, SC-65-3
Win Source Part Number 793229-RJK5015DPK-00#T0
Popularity Medium
Supply and Demand Status Limited
Family Name RJK5015DPK
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK5015DPK-00#T0 CAD Model

Description

The RJK5015DPK-00#T0 from Renesas Electronics America MOSFET is a high-performance device designed for demanding applications.

  • Continuous Drain Current: 25A @ 25°C
  • Drain-Source Voltage: 500V
  • Gate-Source Voltage: ±30V
  • Maximum On-Resistance: 240 mOhm @ 12.5A, 10V
  • Gate Charge: 66nC @ 10V
  • Input Capacitance: 2600pF @ 25V
  • Power Dissipation (Maximum): 150W @ 25°C

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Quantity Unit Price Ext. Price
12+ $4.9030 $58.8360
29+ $4.0229 $116.6641
45+ $3.8970 $175.3650
62+ $3.7711 $233.8082
80+ $3.6463 $291.7040
107+ $3.2687 $349.7509
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Availability: 7,000 pieces
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