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Same model may have multiple batches, images only for reference.
RJK5020 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK5020

Part No RJK5020
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 40A TO3P
Datasheet
RJK5020 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 126nC @ 10V
Max Input Capacitance 5150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 118 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 062540-RJK5020
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK5020 CAD Model

Description

The supply and demand status of this product is limited.

  • Design: This MOSFET is designed to deliver high performance and is manufactured to the highest standards.
  • Choice: It is a perfect choice for applications that require a high level of accuracy and efficiency.
  • Power Dissipation: With a maximum power dissipation of 200W (Tc), this MOSFET can handle high power applications with ease.
  • Ease of Use: The RJK5020 is easy to install and use, making it a great choice for both professionals and hobbyists.

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