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Same model may have multiple batches, images only for reference.
RJL5012DPP-M0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJL5012DPP-M0#T2

Part No RJL5012DPP-M0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO220
Datasheet
RJL5012DPP-M0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 27.8nC @ 10V
Max Input Capacitance 1050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FL
Dimension TO-220-3 Full Pack
Win Source Part Number 1092324-RJL5012DPP-M0#T2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJL5012DPP-M0#T2 CAD Model

Description

The Renesas Electronics America RJL5012DPP-M0#T2 is a high-performance MOSFET designed to deliver exceptional performance in a range of electronic applications.

  • Manufacturer: Renesas Electronics America
  • Packaging: Tube/Rail
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 700 mOhm @ 6A, 10V
  • Polarity: N-Channel
  • Case/Package: TO-220FL

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