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Same model may have multiple batches, images only for reference.
UPA1809GR-9JG-E2-A Real Image
Same model may have multiple batches, images only for reference.

UPA1809GR-9JG-E2-A

Part No UPA1809GR-9JG-E2-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 8TSSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 10 V
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 389201-UPA1809GR-9JG-E2-A
Ultra Librarian 3D Model Ultra Librarian UPA1809GR-9JG-E2-A CAD Model

Description

The UPA1809GR-9JG-E2-A is a Single N-Channel MOSFET from Renesas Electronics America. It is a part of the Discrete Semiconductor Products category and is used for various applications requiring FETs or MOSFETs. The UPA1809GR-9JG-E2-A has a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A. It has a low on-resistance (Rds On) of 21mOhm and a gate threshold voltage (Vgs(th)) of 2.5V. This MOSFET is surface mountable and is packaged in an 8-TSSOP package. It has a high gate charge (Qg) of 10nC and an input capacitance (Ciss) of 520pF.

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