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Same model may have multiple batches, images only for reference.
UPA2701GR-E1-AT Renesas Electronics America
Same model may have multiple batches, images only for reference.

UPA2701GR-E1-AT

Part No UPA2701GR-E1-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8PSOP  /  N-Channel 30 V 14A (Ta) Surface Mount 8-PSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Rds On (Max) @ Id, Vgs 7.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 10 V
Mounting SMD (SMT)
Supplier Device Package 8-PSOP
Package / Case 8-SOIC (0.173", 4.40mm Width)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-UPA2701GR-E1-AT-RETR,RENRNSUPA2701GR-E1-AT
Standard Package 2,500
Win Source Part Number 1102439-UPA2701GR-E1-AT
Ultra Librarian 3D Model Ultra Librarian UPA2701GR-E1-AT CAD Model

Description

The Renesas Electronics America UPA2701GR-E1-AT is a discrete semiconductor product that is designed for use in transistors and MOSFETs.

  • FET Type: N-channel
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 14A @ 25°C
  • Rds On: 7.5mOhm @ 7A and 10V
  • Maximum Gate Charge: 12 nC @ 5 V
  • Input Capacitance: 1200 pF @ 10 V
  • Package: 8-SOIC
  • Alternative: Cross-referenced parts
  • Status: Obsolete

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