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Same model may have multiple batches, images only for reference.
UNR52A5G0L Panasonic
Same model may have multiple batches, images only for reference.

UNR52A5G0L

Part No UNR52A5G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR52A5G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 110037-UNR52A5G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR52A5G0L CAD Model

Description

The Panasonic UNR52A5G0L is an NPN - Pre-Biased transistor.

  • Maximum Collector Current: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Collector Cut-Off Current (max): 500nA
  • Typical Gain (hFE) (min): 160 @ 5mA, 10V
  • Maximum Power Dissipation: 150mW
  • Mounting Type: Surface Mount
  • Case/Package: SMini3-F2
  • Application: It is ideal for use in discrete semiconductor products.

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