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Same model may have multiple batches, images only for reference.
HUF76407P3 Real Image
Same model may have multiple batches, images only for reference.

HUF76407P3

Part No HUF76407P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 13A TO-220AB
Datasheet
HUF76407P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11.3nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 92 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044207-HUF76407P3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF76407P3 CAD Model

Description

The Fairchild/ON Semiconductor 1044207-HUF76407P3 is a MOSFET product that has been marked as obsolete (EOL).

  • Mounting Style: Through-Hole
  • Package: Tube/Rail
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 13A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 11.3nC @ 10V
  • Maximum Rds On @ Id,Vgs: 92 mOhm @ 13A, 10V
  • Technology: MOSFET
  • Polarity: N-Channel
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Supply and Demand Status: Sufficient

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