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Same model may have multiple batches, images only for reference.
TK8A60WS4VX(M
Same model may have multiple batches, images only for reference.

TK8A60WS4VX(M

Part No TK8A60WS4VX(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description N-ch 600V 8A 500MOHM TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 8 A
Fall Time 5.5 ns
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 30 W
Radiation Hardening No
Rise Time 20 ns
RoHS Compliant
Turn-Off Delay Time 70 ns
Turn-On Delay Time 40 ns
Win Source Part Number 1099489-TK8A60WS4VX(M
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK8A60WS4VX(M CAD Model

Description

The Toshiba Semiconductor and Storage TK8A60WS4VX(M is a transistor that has a continuous drain current (ID) of 8A and a power dissipation of 30W.

  • Continuous Drain Current (ID): 8A
  • Power Dissipation: 30W
  • Gate to Source Voltage (Vgs): 30V
  • Number of Pins: 3
  • Rise Time: 20ns
  • Fall Time: 5.5ns
  • Turn-On Delay Time: 40ns
  • Turn-Off Delay Time: 70ns
  • Mounting: Through Hole
  • RoHS Compliant: Yes
  • Radiation Hardening: No
  • Minimum Operating Temperature: -55°C
  • Maximum Operating Temperature: 150°C
  • Supply and Demand Status: Shortage

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