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Same model may have multiple batches, images only for reference.
UPA2737GR-E1-AT Real Image
Same model may have multiple batches, images only for reference.

UPA2737GR-E1-AT

Part No UPA2737GR-E1-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A 8SOP
Datasheet
UPA2737GR-E1-AT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1750pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 1116517-UPA2737GR-E1-AT
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Computers & Computer Peripherals, Power Management
Ultra Librarian 3D Model Ultra Librarian UPA2737GR-E1-AT CAD Model

Description

The Renesas Electronics America UPA2737GR-E1-AT MOSFET is a P-channel power MOSFET that operates at a maximum power dissipation of 1.1W (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 11A (Ta)
  • Max Gate Charge: 45nC @ 10V
  • Maximum Rds On @ Id,Vgs: 13 mOhm @ 11A, 10V
  • Package: 8-SOIC (0.173", 4.40mm Width)
  • Applications: Discrete Semiconductor Products
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1750pF @ 10V
  • Supply and Demand Status: Sufficient
  • Commonly Used In: Computers & Computer Peripherals and Power Management applications

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