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Same model may have multiple batches, images only for reference.
UPA2763T1A-E1-AY
Same model may have multiple batches, images only for reference.

UPA2763T1A-E1-AY

Part No UPA2763T1A-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 100V 42A 8-PIN Hvson T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 42 A
Drain to Source Resistance 23 mΩ
Drain to Source Voltage (Vdss) 100 V
Fall Time 11 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 2.1 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Rds On Max 23 mΩ
Rise Time 13 ns
RoHS Compliant
Turn-Off Delay Time 73 ns
Turn-On Delay Time 28 ns
Win Source Part Number 1102452-UPA2763T1A-E1-AY
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian UPA2763T1A-E1-AY CAD Model

Description

The Renesas UPA2763T1A-E1-AY is a MOSFET transistor designed for RF applications.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (ID): 42A
  • Mounting Type: Surface Mount
  • Power Dissipation: 1.5W
  • RoHS Compliant: Yes
  • Turn-On Delay Time: 28ns
  • Turn-Off Delay Time: 73ns
  • Popularity: Low
  • Supply and Demand Status: Shortage

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