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Same model may have multiple batches, images only for reference.
UPA2766T1A-E1-AY
Same model may have multiple batches, images only for reference.

UPA2766T1A-E1-AY

Part No UPA2766T1A-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 130A 8SON
Datasheet
UPA2766T1A-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 130A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 257nC @ 10V
Max Input Capacitance 10850pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 1.82 mOhm @ 39A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HVSON (5.4x5.15)
Dimension 8-PowerVDFN
Win Source Part Number 213740-UPA2766T1A-E1-AY
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian UPA2766T1A-E1-AY CAD Model

Description

The Renesas Electronics America 213740-UPA2766T1A-E1-AY is an N-channel MOSFET with a maximum power dissipation of 1.5W (Ta) and 83W (Tc).

  • Category: discrete semiconductor products category
  • Popularity: medium popularity
  • Manufacturer: Renesas Electronics America
  • Win Source Part Number: 213740-UPA2766T1A-E1-AY
  • Package: 8-HVSON (5.4x5.15)
  • Mounting: SMD (SMT)

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